Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT
| Autor: | R.B. Upadhyay, A N Bhattacharya, Gunjan Rastogi, Santanu Sinha, R.K. Kaneriya |
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| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science business.industry Contact resistance Transistor Heterojunction Substrate (electronics) High-electron-mobility transistor Condensed Matter Physics law.invention law General Earth and Planetary Sciences Optoelectronics Electrical and Electronic Engineering Fermi gas business Ohmic contact |
| Zdroj: | Radio Science. 54:904-909 |
| ISSN: | 1944-799X 0048-6604 |
| DOI: | 10.1029/2019rs006855 |
| Popis: | Formation of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures plays a vital role in high power and high frequency device technology. Such kinds of heterostructures are used for the fabrication of high electron mobility transistors (HEMTs). Ohmic contacts to AlGaN/AlN/GaN-based heterostructures with low contact resistance and smooth surface are crucial in the development of high power, high frequency transistors in the GaN system. In the present study, physics-based simulation of impact of ohmic contact resistance on DC and RF characteristics of AlGaN/AlN/GaN HEMT on 6H-SiC substrate has been addressed for the first time. Samples A, B, and C of contact resistance 0.25, 0.27, and 0.59 Ω ∗ mm, respectively, were fabricated with different process variations. By using measured contact resistance values, physics-based simulation of 100-nm gate length GaN HEMT was done, and corresponding device behavior was studied using TCAD. It has also been shown that simulated results for AlGaN/AlN/GaN heterostructure are closely matching with reported measured data. |
| Databáze: | OpenAIRE |
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