| Autor: |
Kang-Ping Peng, Horng-Chih Lin, Chia-Tsong Chen, Pei-Wen Li, Thomas George, Po-Hsiang Liao |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). |
| DOI: |
10.1109/edtm.2018.8421489 |
| Popis: |
We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was exploited to simultaneously create these heterostructures in a single oxidation step. Single-crystalline (100)/(110) Si}_{1-x}Ge}_{x} shells with Ge content as high as x= 0.85/0.35 and with a compressive strain of 3%/1.5% were achieved. Our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity, providing a “building block” for the fabrication of Ge-based MOS devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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