Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers

Autor:	Ian T. Ferguson, Christiana B. Honsberg, Nikolai Faleev, Robert L. Opila, Balakrishnam Jampana
Rok vydání:	2009
Předmět:	Critical layer Crystallography Materials science business.industry Critical point (thermodynamics) Absorption band Photovoltaic system Optoelectronics Crystalline perfection Direct and indirect band gaps Nitride business Epitaxy
Zdroj:	MRS Proceedings. 1167
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-1167-o07-04
Popis:	Crystalline perfection of InGaN epi-layers is the missing design parameter for InGaN solar cells. Structural deterioration of InGaN epi-layers depends on the thickness, composition and growth conditions as well. Increasing the InGaN epi-layer thickness beyond a critical point introduces extended crystalline defects that hinder the optical absorption and electrical properties. Increasing the InGaN composition further reduces this critical layer thickness. The optical absorption band edge is sharp for III-nitride direct band gap materials. The band edge profile is deteriorated by creation of extended crystalline defects in the InGaN epitaxial material. The design of InGaN solar cells requires the growth of epi-layers where a trade off between crystalline perfection and optical absorption properties is reached.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6602f3035d9a33ed325309bafdd19 https://doi.org/10.1557/proc-1167-o07-04 Zobrazit plný text záznamu Full text from SpringerLink