Photoluminescence CF Pb1−xSnxTe (x ∼ 0.2) crystals doped with Cd and In

Autor:	G. V. Flusov, I. I. Zasavitsky, B. N. Matsonashvili
Rok vydání:	2008
Předmět:	Photoluminescence Materials science Impurity Doping Radiative transfer Analytical chemistry Intensity (heat transfer)
Zdroj:	Physics of Narrow Gap Semiconductors ISBN: 9783540111917
DOI:	10.1007/3-540-11191-3_79
Popis:	It was found that by doping of Pb1−xSnxTe (0.16 ≲ x ≲ 0.22) crystals with Cd or In the photoluminescence,(PL) intensity is increased ∼ 5 and ∼ 20 times, respectively. The radiative transitions to deep impurity levels, the substantial (up to 5%) increasing of Eg and many (up to 8) spin-flip transitions in case of Cd are observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e4655dcfbb7053f54b79987615c8f75 https://doi.org/10.1007/3-540-11191-3_79 Zobrazit plný text záznamu