Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs

Autor:	In-Shik Han, Won-Ho Choi, Dae M. Kim, Hee-Hwan Ji, Hi-Deok Lee, Bomsoo Kim, Tae-Gyu Goo, Ook-Sang You, Chang-Ki Baek, Younghwan Son
Rok vydání:	2006
Předmět:	chemistry.chemical_compound Materials science chemistry Nanoelectronics Gate oxide MOSFET Analytical chemistry Oxide Remote plasma chemistry.chemical_element Nanoscopic scale Nitrogen Nitriding
Zdroj:	2006 IEEE Nanotechnology Materials and Devices Conference.
DOI:	10.1109/nmdc.2006.4388878
Popis:	Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nano-scale CMOSFET.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d7573dd2b9a3026aad1f8dbb91d6517 https://doi.org/10.1109/nmdc.2006.4388878 Zobrazit plný text záznamu