Study of Domain Structure and Dielectric Properties of Layered TGS − TGS + Cr Crystals
Autor: | V. N. Shut, A. K. Lashkova, Radmir V. Gainutdinov, S. E. Mozzharov, I. F. Kashevich, N. V. Belugina, A. L. Tolstikhina, E. S. Ivanova |
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Rok vydání: | 2015 |
Předmět: |
Materials science
Condensed matter physics Atomic force microscopy chemistry.chemical_element Dielectric Condensed Matter Physics Polarization (waves) Triglycine sulfate Electronic Optical and Magnetic Materials Crystal chemistry.chemical_compound Chromium chemistry Impurity Condensed Matter::Superconductivity Microscopy |
Zdroj: | Ferroelectrics. 486:33-40 |
ISSN: | 1563-5112 0015-0193 |
DOI: | 10.1080/00150193.2015.1099419 |
Popis: | The complex study of TGS – TGS+Cr crystals with a profile distribution of chromium ions Cr3+ on macro (measurement of dielectric properties) and micro level (domain structure by AFM data) was carried out. These crystals differ from conventional crystals (with uniform impurity distribution throughout the volume) by a higher value of bias fields and a high value of spontaneous polarization. Crystals are more unipolar and are characterized by a high stability of properties. The domain configuration on the boundary of growth layers with different impurity composition is studied by Piezoresponce Force Microscopy (PFM). It is established that periodical impurity layers are not formed throughout all crystal volume, but occur only in individual growth pyramids, at the parts where the polarization vector has a nonzero component on the direction of normal to the growth faces. The processing of PFM-images indicated that the static unipolarity of layers with chromium incorporation and without impurity is roughly iden... |
Databáze: | OpenAIRE |
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