Study of Domain Structure and Dielectric Properties of Layered TGS − TGS + Cr Crystals

Autor: V. N. Shut, A. K. Lashkova, Radmir V. Gainutdinov, S. E. Mozzharov, I. F. Kashevich, N. V. Belugina, A. L. Tolstikhina, E. S. Ivanova
Rok vydání: 2015
Předmět:
Zdroj: Ferroelectrics. 486:33-40
ISSN: 1563-5112
0015-0193
DOI: 10.1080/00150193.2015.1099419
Popis: The complex study of TGS – TGS+Cr crystals with a profile distribution of chromium ions Cr3+ on macro (measurement of dielectric properties) and micro level (domain structure by AFM data) was carried out. These crystals differ from conventional crystals (with uniform impurity distribution throughout the volume) by a higher value of bias fields and a high value of spontaneous polarization. Crystals are more unipolar and are characterized by a high stability of properties. The domain configuration on the boundary of growth layers with different impurity composition is studied by Piezoresponce Force Microscopy (PFM). It is established that periodical impurity layers are not formed throughout all crystal volume, but occur only in individual growth pyramids, at the parts where the polarization vector has a nonzero component on the direction of normal to the growth faces. The processing of PFM-images indicated that the static unipolarity of layers with chromium incorporation and without impurity is roughly iden...
Databáze: OpenAIRE