Influence of growth conditions on the defect formation in SiC ingots

Autor:	C Faure, Y Grange, Jean-Marie Bluet, K Chourou, P Grosse, M Anikin, Michel Pons, G Basset, Roland Madar
Rok vydání:	1999
Předmět:	Lely method Crystallography Materials science Mechanics of Materials Mechanical Engineering Metallurgy Crucible General Materials Science Grain boundary Growth rate Condensed Matter Physics Crystallographic defect
Zdroj:	Materials Science and Engineering: B. :73-76
ISSN:	0921-5107
DOI:	10.1016/s0921-5107(98)00448-6
Popis:	6H-SiC ingots with diameters of 25-35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investigated. The developed growth process allows the growth of ingots under quasi-equilibrium conditions with and without enlargement at a growth rate between 1-1.5 mm h - 1 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0cc698e9fc70829f215f5babea319541 https://doi.org/10.1016/s0921-5107(98)00448-6 Zobrazit plný text záznamu Full Text from ScienceDirect