Autor: |
David Ockwell, Robert Kazinczi, Ron Kool, Rudy Peeters, Noreen Harned, Judon Stoeldraijer, Henk Meijer, Jan-Willem van der Horst, Peter Kuerz, Sjoerd Lok, Guido Schiffelers, Richard Droste, Erwin Antonius Martinus Van Alphen, Martin Lowisch, Hans Meiling, Eelco van Setten |
Rok vydání: |
2013 |
Předmět: |
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Zdroj: |
Extreme Ultraviolet (EUV) Lithography IV. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.2010932 |
Popis: |
All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonstrated imaging and overlay performance both at ASML and end-users that supports sub- 27nm device work. Dedicated chuck overlay performance of |
Databáze: |
OpenAIRE |
Externí odkaz: |
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