Effect of Al2O3 and Au dopants on the structure and electrical properties of ZnO by oxidizing Zn film

Autor: Qiang Wang, Guojian Li, Jun Ma, Sunjuan Peng
Rok vydání: 2016
Předmět:
Zdroj: Ceramics International. 42:19141-19146
ISSN: 0272-8842
Popis: Doped ZnO films have been fabricated by oxidizing Au/Zn bilayer, Zn-Al single layer and Au/Zn-Al bilayer for 90 min at 600 °C. The effect of Al 2 O 3 and Au dopants on the structure and thermoelectric properties of the doped ZnO films have been explored. The results show that the ZnO films oxidized from the Au/Zn bilayer present dendritic nano-column perpendicular to substrate. The column growth transforms to nanoparticle with doping Al 2 O 3. The existence of Au decreases the particle size of the Al 2 O 3 doped ZnO films and inhibits the growth of Al 2 O 3 . The transmittance of the films is sharply reduced with the existence of Al 2 O 3 . Both growth model and dopant have significant effect on the electrical properties. The resistivity of the ZnO film oxidized from the Au/Zn film with a nano-column structure is much larger and is about 3×10 5 Ω m at 90 °C. However, the resistivity of the ZnO films oxidized from the Au/Zn-Al and Zn-Al decreases to 10 −7 ~10 −8 Ω m, which is in the range of semiconductor. The Seebeck coefficient S of the ZnO films oxidized from the Au/Zn-Al and Zn-Al films are both positive. The maximum power factor is 3.995×10 −5 W/(m K 2 ) at 240 °C in the ZnO film oxidized from the Zn-Al film. These results show that the dopants of Au and Al 2 O 3 provide a new method to tune the structure, thermal and optical properties of the doped ZnO films.
Databáze: OpenAIRE