Effect of Al2O3 and Au dopants on the structure and electrical properties of ZnO by oxidizing Zn film
Autor: | Qiang Wang, Guojian Li, Jun Ma, Sunjuan Peng |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science Dopant Process Chemistry and Technology Bilayer Doping Nanoparticle Nanotechnology 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Chemical engineering Electrical resistivity and conductivity Seebeck coefficient 0103 physical sciences Materials Chemistry Ceramics and Composites Thin film 0210 nano-technology |
Zdroj: | Ceramics International. 42:19141-19146 |
ISSN: | 0272-8842 |
Popis: | Doped ZnO films have been fabricated by oxidizing Au/Zn bilayer, Zn-Al single layer and Au/Zn-Al bilayer for 90 min at 600 °C. The effect of Al 2 O 3 and Au dopants on the structure and thermoelectric properties of the doped ZnO films have been explored. The results show that the ZnO films oxidized from the Au/Zn bilayer present dendritic nano-column perpendicular to substrate. The column growth transforms to nanoparticle with doping Al 2 O 3. The existence of Au decreases the particle size of the Al 2 O 3 doped ZnO films and inhibits the growth of Al 2 O 3 . The transmittance of the films is sharply reduced with the existence of Al 2 O 3 . Both growth model and dopant have significant effect on the electrical properties. The resistivity of the ZnO film oxidized from the Au/Zn film with a nano-column structure is much larger and is about 3×10 5 Ω m at 90 °C. However, the resistivity of the ZnO films oxidized from the Au/Zn-Al and Zn-Al decreases to 10 −7 ~10 −8 Ω m, which is in the range of semiconductor. The Seebeck coefficient S of the ZnO films oxidized from the Au/Zn-Al and Zn-Al films are both positive. The maximum power factor is 3.995×10 −5 W/(m K 2 ) at 240 °C in the ZnO film oxidized from the Zn-Al film. These results show that the dopants of Au and Al 2 O 3 provide a new method to tune the structure, thermal and optical properties of the doped ZnO films. |
Databáze: | OpenAIRE |
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