Optical properties of GaAs/AlxGa1−xAs multiple quantum wells versus electric field including exciton transition broadening effects in optical modulators

Autor:	J. M. Meese, Chih‐Hsiang Lin, Yia-Chung Chang
Rok vydání:	1994
Předmět:	Optical modulator Condensed matter physics Chemistry Electric field Attenuation coefficient Exciton Electro-absorption modulator General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Absorption (electromagnetic radiation) Refractive index Quantum well
Zdroj:	Journal of Applied Physics. 75:2618-2627
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.356237
Popis:	A systematic study of the refractive index and absorption coefficient of GaAs/AlxGa1−xAs quantum wells as a function of electric field is presented. In this model, the effective‐mass mismatches between GaAs and AlxGa1−xAs have been considered. For the interband optical absorption, we have considered the effect of the final‐state interactions, and found an analytical function well describing this effect. The line‐shape functions and their appropriate linewidths due to the inhomogeneous broadening mechanisms have been considered as a function of layer thicknesses, Al fraction, electric field, and residual doping density in the intrinsic multiple‐quantum‐well (MQW) region of a p‐i‐n optical modulator. The calculated absorption coefficient as a function of wavelength and electric field agrees very well with the experimental data. The calculated refractive index is indirectly verified by comparing the calculated reflectance spectra with the measured data of a MQW reflection modulator.
Databáze:	OpenAIRE
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