| Autor: |
M. Azrack, T. Romig, M.J. Rendon, King Chao |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432). |
| DOI: |
10.1109/iit.2000.924213 |
| Popis: |
Some ASIC parts in the 0.5 /spl mu/m range experienced severe yield loss due to implant charging issues during the source/drain extension implant. The failing dice were in a circular pattern. The edge intensive poly over gate oxide test structures showed depressed breakdown voltages while other gate oxide integrity structures were not affected. Photo resist out-gassing induced vacuum related holds had strong correlation to reduced yield and depressed breakdown voltages. Replacing the forward biased electron shower with the newer reverse biased electron shower showed improved yield while the optimization of the photo resist UV bake eliminated the vacuum related holds. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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