High Reliability of AlGaInP Light-Emitting Diodes With Tensile Strain Barrier-Reducing Layer
| Autor: | Juh-Yuh Su, Y.K. Su, Meng-Chi Wu, Wen-Bin Chen, Kung-Ming Liang |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Tensile strain Cladding (fiber optics) Atomic and Molecular Physics and Optics Band offset Electronic Optical and Magnetic Materials law.invention Dynamic resistance Lattice size law Valence band Optoelectronics Electrical and Electronic Engineering business Diode Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 16:30-32 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/lpt.2003.818926 |
| Popis: | A high-reliability multiple quantum-well AlGaInP light-emitting diode is grown by inserting a novel tensile strain barrier-reducing (TSBR) structure between the window and cladding layers. The TSBR (/spl sim/150 /spl Aring/ of Ga/sub 0.65/In/sub 0.35/P) film is of lattice size with valence band energy and is located between window and cladding layers, thus, significantly reducing band offset and device forward bias, and accordingly achieves improvement in dynamic resistance and junction heating. Reducing junction heating significantly enhances device reliability and lifetime. The TSBR layer also acts as a buffer layer, reducing band, and junction discontinuity between the misfit layers, an effect that can be attributed to reduced nonradiative recombination and defect density. Accordingly, TSBR is a successful design for improving global life behavior. |
| Databáze: | OpenAIRE |
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