Substrate agnostic monolithic integration of the inline phase-change switch technology
| Autor: | Matthew R. King, Pavel Borodulin, El-Hinnawy Nabil, Robert M. Young, B. Wagner, Andy Ezis, Evan B. Jones, Doyle T. Nichols, C. Furrow, Jeyanandh Paramesh, James A. Bain, Carlos R. Padilla |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Fabrication Computer science business.industry Electrical engineering Process (computing) 020206 networking & telecommunications 02 engineering and technology Substrate (printing) 01 natural sciences RF switch 0103 physical sciences Broadband Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Insertion loss Isolation (database systems) business Electronic circuit |
| Zdroj: | 2016 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2016.7540103 |
| Popis: | Omni-directional GeTe inline phase-change switches (IPCS) have been fabricated and heterogeneously integrated with commercial SiGe BiCMOS technology to create a reconfigurable receiver. The reconfigurable receiver required integrating thirteen (13) 8-port and two (2) 4-port omni-directional switch circuits with a commercial SiGe IC, requiring very stable and repeatable performance from the 112 integrated GeTe IPCS devices. Insertion loss, isolation, and cycling data will be presented, as well as performance issues encountered during the heterogeneous integration process. A new monolithic integration scheme is briefly discussed that is independent of the substrate and semiconductor technology used. This integration plan enables the monolithic fabrication of GeTe IPCS devices on any semiconductor technology, allowing low-loss, low-power, broadband reconfigurable RF systems and SoCs (system-on-chip) to be realized in any technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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