Origins of k · p errors for [001] GaAs/AlAs heterostructures
| Autor: | Alex Zunger, David Gershoni, D. M. Wood |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Physics
Systematic error Condensed matter physics business.industry Superlattice General Physics and Astronomy Heterojunction Gaas alas Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Pseudopotential Condensed Matter::Materials Science Semiconductor Dispersion (optics) business Quantum well |
| Zdroj: | Europhysics Letters (EPL). 33:383-390 |
| ISSN: | 1286-4854 0295-5075 |
| DOI: | 10.1209/epl/i1996-00351-x |
| Popis: | T he k ¢ pmethod + envelope function combination used for semiconductor het- erostructures is based on approximations dubious under some conditions. We directly compare 8-band k¢p with pseudopotential results for (001) GaAs/AlAs superlattices and quantum wells with all k¢p input parameters directly computed from bulk GaAs and AlAs pseudopotential bands. We flnd generally very good agreement for zone-center hole states within» 200 meV of the GaAs valence band maximum, but i) systematic errors deeper in the valence band and ii) qualitative errors for even the lowest conduction bands with appreciable contributions from ofi-i zinc-blende states. We trace these errors to inadequate k¢p description of bulk GaAs and AlAs band dispersion away from the zone center. |
| Databáze: | OpenAIRE |
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