Synthesis of a Cu2SnS3 ternary compound by thermal annealing of a metal layer in sulfur vapor

Autor:	Yu. N. Vlasov, A. V. Budanov, V. E. Ternovaya, S. A. Ivkov, G. I. Kotov, E. V. Rudnev
Rok vydání:	2019
Předmět:	History chemistry.chemical_compound Materials science chemistry Chemical engineering Ternary compound chemistry.chemical_element Layer (electronics) Sulfur Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1347:012105
ISSN:	1742-6596 1742-6588
Popis:	A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of the quasi-closed volume type. Using X-ray phase analysis, the optimal conditions for the formation of Cu2SnS3 films homogeneous in phase composition were found: annealing temperature 450 °C, sulfur vapor pressure ∼ 0.2 torr. The sulfide layers obtained in this way in their elemental composition correspond to the Cu2SnS3 compound stoichiometry. Cu2SnS3 films have an optical band gap of 1 eV, and the absorption coefficient in the visible region of the spectrum is 2·105 cm –1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0778e4577eb2d63209efa63a3019b54d https://doi.org/10.1088/1742-6596/1347/1/012105 Zobrazit plný text záznamu