MOSFET layout modifications for hump effect removal
| Autor: | M. Carmona, O. Gagliano, J.-L. Ogier, Julien Delalleau, B. Rebuffat, L. Lopez, D. Goguenheim |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Bending (metalworking) business.industry Transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Reliability (semiconductor) law MOSFET Forensic engineering Optoelectronics Electrical and Electronic Engineering business Parametric statistics |
| Zdroj: | Microelectronic Engineering. 109:168-171 |
| ISSN: | 0167-9317 |
| Popis: | Display Omitted A statistics method of parametric measurement enabled the characterization of hump effect.With TCAD simulation in three dimensions, hump effect can be put in evidence.Hump effect can be suppressed by a MOSFET layout modification without impacted the reliability performances. Hump effect has been widely studied but it is still present on technology presenting "thick oxide". In this paper, two MOSFET layout modifications have been studied in order to suppress hump effect. We have used a statistics method of parametric measurement to reveal the hump effect removal on short transistors of both devices. In order to explain these results, TCAD simulations in three dimensions have been run and have demonstrated that the hump effect can be removed due to modification of the bending of current lines along the channel. Moreover, we demonstrated that the reliability performances are not impacted by these designs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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