Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

Autor:	D. Eger, R. Goshen, E. Weiss, Gabby Sarusi, N. Mainzer, A. Zemel
Rok vydání:	1990
Předmět:	Nuclear and High Energy Physics Materials science business.industry Gamma ray Radiation Photodiode law.invention Mercury-vapor lamp Nuclear Energy and Engineering law Radiation damage Optoelectronics Quantum efficiency Irradiation Electrical and Electronic Engineering business Dark current
Zdroj:	IEEE Transactions on Nuclear Science. 37:2042-2049
ISSN:	1558-1578 0018-9499
DOI:	10.1109/23.101227
Popis:	Planar n/sup +/p Hg/sub 1-x/ Cd/sub x/Te (x=0.23) photodiodes passivated with ZnS were irradiated by a Co/sup 60/ gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect is found by exposing the photodiodes to UV illumination from a high-pressure mercury lamp. By filtering the UV light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06b2419aec65a11c096079e53baf3438 https://doi.org/10.1109/23.101227 Zobrazit plný text záznamu