Model-based metrology of resist patterns in lithography

Autor:	Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Henry Megens, Kaustuve Bhatacharrya, Noelle Wright, Michael Kubis, Hugo Augustinus Joseph Cramer, Maurits van der Schaar
Rok vydání:	2011
Předmět:	Engineering drawing Materials science Resist Position (vector) Electronic engineering Diffraction efficiency Optical metrology Lithography AND gate Metrology
Zdroj:	Imaging and Applied Optics.
DOI:	10.1364/cosi.2011.cwa1
Popis:	A model-based optical metrology concept is presented that can be used for measuring the shape and position of resist features in the production of Memory and Logic devices. A few application examples are presented that demonstrate the capabilities of this concept.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::068b5d81ebf78405e69507d67a5eb681 https://doi.org/10.1364/cosi.2011.cwa1 Zobrazit plný text záznamu