Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

Autor:	S. Sugunraj, G. Aravindan, M. Srinivasan, P. Ramasamy
Rok vydání:	2022
Předmět:	Electronic Optical and Magnetic Materials
Zdroj:	Silicon.
ISSN:	1876-9918 1876-990X
DOI:	10.1007/s12633-022-02097-5
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::067f7be21adc8a8a008de22254e5af49 https://doi.org/10.1007/s12633-022-02097-5 Zobrazit plný text záznamu Full text from SpringerLink