Rapid thermal recrystallization of amorphous silicon films
| Autor: | J. Koprinarova, Beshkov Georgi D, E. Vlaev, V. Lazarova, K. Gesheva, D. B. Dimitrov |
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| Rok vydání: | 1997 |
| Předmět: |
Amorphous silicon
Materials science Annealing (metallurgy) Mechanical Engineering Nanocrystalline silicon Recrystallization (metallurgy) engineering.material Condensed Matter Physics Amorphous solid Monocrystalline silicon chemistry.chemical_compound Polycrystalline silicon chemistry Amorphous carbon Mechanics of Materials engineering General Materials Science Composite material |
| Zdroj: | Journal of Materials Research. 12:2511-2514 |
| ISSN: | 2044-5326 0884-2914 |
| Popis: | In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800–1200 °C in vacuum 5 × 10−5 Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing. |
| Databáze: | OpenAIRE |
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