Control of surface states in GaSb/AlxGa1−xAsySb1−y/GaxIn1−xSb/AlxGa1−xAsySb1−y quantum well structures

Autor:	Yung Kee Yeo, G. W. Turner, D. K. Johnstone, R. L. Hengehold
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Inorganic chemistry Laser Boron trichloride law.invention Gallium arsenide chemistry.chemical_compound chemistry law Etching (microfabrication) Optoelectronics Reactive-ion etching business Quantum well Surface states Diode
Zdroj:	Applied Physics Letters. 75:2779-2781
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.125147
Popis:	GaSb-based lasers show advanced capabilities over other material for the far-infrared wavelength range. However, for quantum-well (QW) laser structures of AlxGa1−xAsySb1−y/GaxIn1−xAsySb1−y/AlxGa1−xAsySb1−y grown on GaSb, each component element etches at a different rate, making it difficult to achieve quality surfaces sufficiently free of defects. Thus, in this letter, the effects on the surface quality of GaSb-based laser materials have been studied using phosphoric acid etching, boron trichloride reactive ion etching (RIE), and a postetch sulfur treatment. In addition, the quality of the surface is compared for two barriers of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93, based on current–voltage measurements as a function of temperature. The best surfaces were produced by RIE and by using as much Ga in the barriers as the device operation allows. A generation center in the Ga0.81In0.19As0.12Sb0.88 was found at 0.14 eV for QW diodes with low surface conduction.
Databáze:	OpenAIRE
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