Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth
| Autor: | Paul Hashimoto, Adam J. Williams, Adele E. Schmitz, Keisuke Shinohara, C. Butler, S. Kim, Robert Grabar, D. Regan, P. J. Willadsen, Shawn D. Burnham, Andrea Corrion, Miroslav Micovic, David F. Brown, Ivan Milosavljevic |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Gallium nitride Electronic Optical and Magnetic Materials Threshold voltage law.invention Barrier layer chemistry.chemical_compound chemistry Etching (microfabrication) law Optoelectronics Wafer Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | IEEE Transactions on Electron Devices. 58:1063-1067 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and depletion-mode (D-mode) AIN/GaN/AlGaN double-heterojunction field-effect transistors (DHFETs) on a single SiC substrate, wherein the E-mode devices had a 2-nm-thick AlN barrier layer and the D-mode devices had a 3.5-nm-thick AlN barrier layer. The direct-current and radio-frequency (RF) performance of the resulting DHFETs was equivalent to devices fabricated using our baseline process with a normal MBE growth. D-mode devices with a gate length of 150 nm had a threshold voltage Vth of -0.10 V, a peak transconductance gm value of 640 mS/mm, and current gain and power-gain cutoff frequencies fT and fmax of 82 and 210 GHz, respectively. E-mode devices on the same wafer with the same dimensions had a Vth value of +0.24 V, a peak gm value of 525 mS/mm, and fT and fmax values of 50 and 150 GHz, respectively. The application of this regrowth technique is not, in any way, limited to the integration of E- and D-mode devices, and this method greatly expands the design possibilities of RF and power switching circuits in the nitride material system. |
| Databáze: | OpenAIRE |
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