Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques
| Autor: | Pavel A. Yunin, Pavel N. Brunkov, B. Ber, P. Chapon, M. N. Drozdov, D. Kazantsev, R. Duda, Alexander Tolstogouzov, Vladimir N. Polkovnikov, Petr Bábor |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Resolution (mass spectrometry) Scattering Metals and Alloys Analytical chemistry Surfaces and Interfaces Mass spectrometry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Characterization (materials science) Secondary ion mass spectrometry Sputtering Optical Emission Spectrometer Materials Chemistry |
| Zdroj: | Thin Solid Films. 540:96-105 |
| ISSN: | 0040-6090 |
| Popis: | A round-robin characterization is reported on the sputter depth profiling of [60 × (3.0 nm Mo/0.3 nm B 4 C/3.7 nm Si)] and [60 × (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B 4 C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and cons of each instrumental approach are summarized. |
| Databáze: | OpenAIRE |
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