Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation
| Autor: | I. N. Kots, Oleg A. Ageev, V. V. Polyakova, Vladimir A. Smirnov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Materials science Base (chemistry) Silicon Anodic oxidation Substrate surface Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Nanoelectronics 0103 physical sciences Materials Chemistry Voltage pulse Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Russian Microelectronics. 48:66-71 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | The nanoscaled profiling of a silicon 5 (111) n-type substrate surface is studied by the local anodic oxidation (LAO). Varying the voltage pulse amplitude from 5 to 12.5 V and the humidity from 30 ± 1 to 70 ± 1% during the LAO is a promising way to form oxide structures with heights from 0.5 ± 0.3 to 2.1 ± 0.1 nm and profiled structures with depths from 0.4 ± 0.3 to 1.5 ± 0.2 nm on the substrate. The results can be applied to the development of technological processes of the element base of silicon-based nanoelectronics using the probe nanotechnologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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