Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy

Autor:	Hiroki Imabayashi, Kenji Shiojima, Tetsu Kachi
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	Materials Science in Semiconductor Processing. 162:107536
ISSN:	1369-8001
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0446b2ad71fdc7a9fb7468d3a1a0244e https://doi.org/10.1016/j.mssp.2023.107536 Zobrazit plný text záznamu Full Text from ScienceDirect