| Autor: |
S. Leslie, Eric J. Stewart, Megan McCoy, G.M. Bates, Rowland C. Clarke, Gregory DeSalvo, S. Van Campen, Ty McNutt, A.P. Walker, H.C. Heame |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's. |
| DOI: |
10.1109/ispsd.2007.4294938 |
| Popis: |
We demonstrate an 8 kV, 3 A cascode power switch using SiC VJFETs for both the normally-on and normally-off devices. The normally-on SiC VJFETs have blocking voltages greater than 8 kV at VGS =-50 V pinch-off voltage and on-state currents of more than 4 A at VGS=0 V. The normally-off SiC VJFETs block 70 V (VGS=0 V) and can drive >2 A/device with positive gate voltage (VGS=2.5 V). The VJFETs were combined into a module to create the 8 kV all-SiC cascode switch that blocks 8 kV normally-off and drives 3 A of on-state current. Preliminary switching measurements show very fast rise and fall times. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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