Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure
| Autor: | Yong-Jin Kim, Soon Young Oh, Jang Gn Yun, Jin Suk Wang, Chel-Jong Choi, Hee Hwan Ji, Hi Deok Lee, Won-Jae Lee |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Metallurgy chemistry.chemical_element Condensed Matter Physics Salicide Atomic and Molecular Physics and Optics chemistry.chemical_compound Nickel silicide chemistry Chemical engineering Rapid thermal processing Silicide General Materials Science Thermal stability Ternary operation Tin Layer (electronics) |
| Zdroj: | Solid State Phenomena. :1261-1264 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.121-123.1261 |
| Popis: | In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|