Doped Wide Bandgap Materials and Devices from Semiconducting Boron Carbide

Autor:	Neil Platt, Jennifer I. Brand, Kyle A. Nelson, Benjamin W. Montag, Neil M. Boag
Rok vydání:	2006
Předmět:	Materials science Band gap business.industry Doping chemistry.chemical_element Boron carbide Chemical vapor deposition chemistry.chemical_compound chemistry Optoelectronics Thin film Fourier transform infrared spectroscopy Spectroscopy business Boron
Zdroj:	ECS Transactions. 3:429-435
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2357234
Popis:	Semiconducting boron carbide is showing promise as a refractory and robust material with a tunable bandgap. Thin films and devices are easily grown with standard chemical vapor deposition techniques using a variety of boron and carbon precursors including the closo-dodecacarboranes (C2B10H12). Although undoped boron carbide films grown from orthocarborane (1,2- C2B10H12) are p-type, those grown from metacarborane (1,7- C2B10H12) and paracarborane (1,12-C2B10H12) are n-type allowing the production of all boron carbide diodes. In this experimental study, new precursors are used that contain phosphorus and yield new doped n-type films on deposition. The films were characterized by a variety of techniques using UV-Vis spectroscopy (optical bandgap), photoemission (PES) and inverse photoemission (IPES) (electronic structure) and FTIR spectroscopy. Performance evaluation of these new materials will be compared with previous materials.
Databáze:	OpenAIRE
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