Heterostructure Simulation for Optoelectronic Devices Efficiency Improvement
| Autor: | S.V. Podgornaya, O. I. Rabinovich |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping chemistry.chemical_element Photodetector Heterojunction 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences law.invention Photodiode chemistry Aluminium law 0103 physical sciences Solar cell Optoelectronics Quantum efficiency 0210 nano-technology business |
| Zdroj: | Software Engineering Perspectives in Intelligent Systems ISBN: 9783030633189 |
| Popis: | In this work nitride heterostructures were simulated for optoelectronic devices such as photodetectors (phototransistors) and solar cells for improving their efficiency. The influence of aluminium atoms and doping as well as temperature on AlGaN/GaN-based heterojunction phototransistors characteristics have been studied. The results suggest that the AlGaN/GaN phototransistor with the Al concentration – 28% and the doping concentration - Nd = 2 × 1015 cm−3 and Na = 2.1 × 1016 cm−3, exhibits a considerable sensitivity and the quantum efficiency approaching about 10%. Solar cells model based on GaN/Si heterostructure was created. The optimum heterostructure design and doping profile were defined. Quite high solar cell efficiencies based on n-GaN−p-Si heterostructures such as 14.35% at 1 · AM 1.5 and 21.10% at 1000 · AM 1.5 were achieved. |
| Databáze: | OpenAIRE |
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