Annealing of frozen‐in defects in ZnO
| Autor: | Mart Viljus, A. Öpik, V. Seeman, L. Türn, T. Nirk, K. Lott |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Vapor pressure Annealing (metallurgy) Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention Vacuum annealing law Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Ceramic 0210 nano-technology Electron paramagnetic resonance Single crystal |
| Zdroj: | physica status solidi c. 13:590-593 |
| ISSN: | 1610-1642 1862-6351 |
| Popis: | High temperature electrical conductivity (HTEC) as a function of time after step-like change of Zn vapor pressure (PZn) at fixed ZnO crystal temperature (TZnO) and after step-like change of TZnO at fixed PZn was measured in undoped ZnO single crystal and in undoped ZnO ceramic sample. It was found a difference on HTEC relaxation curves in these measurements. Samples were cooled from temperature 1273 K to room temperature. Appearance of asymmetric spectrum with g≈1.96 and disappearance of Mn2+ spectrum were detected in EPR investigations. Then vacuum annealing was applied for these samples and intensity of g≈1.96 EPR spectrum was registered after every vacuum annealing cycles. The change in sample color, the change in g≈1.96 spectrum intensity as well as appearance again of Mn2+ EPR spectrum in the course of vacuum annealing was explained by the model of defect clusters formed during cooling of the crystal. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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