AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications

Autor:	Peter Chow, Amir M. Dabiran, Byung Hwan Chu, Yu-Lin Wang, Fan Ren, H. T. Wang, Nancy D. Denslow, K. J. Linthicum, Chih-Yang Chang, Jerry W. Johnson, Kevin J. Kroll, C. F. Dungen, George P. Papadi, E. L. Pine, Barbara J. Sheppard, Chien-Fong Lo, Stephen J. Pearton, James K. Coleman
Rok vydání:	2010
Předmět:	Materials science business.industry Optoelectronics General Materials Science Algan gan High-electron-mobility transistor business
Zdroj:	Nanoscience and Nanotechnology Letters. 2:120-128
ISSN:	1941-4919 1941-4900
DOI:	10.1166/nnl.2010.1068
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01ed0588f33fb05b237604812bed56e6 https://doi.org/10.1166/nnl.2010.1068 Zobrazit plný text záznamu