Structure and stress of Cu films prepared by high power pulsed magnetron sputtering
| Autor: | Y.T. Li, C. Z. Chen, Yongxiang Leng, Nan Huang, Q.Y. Deng, P.P. Jing, Y.L. Gong, B.H. Wu, D.L. Ma |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
High peak Materials science 02 engineering and technology Adhesion Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Grain size Surfaces Coatings and Films Stress (mechanics) Electrical resistivity and conductivity Ionization 0103 physical sciences High-power impulse magnetron sputtering Composite material 0210 nano-technology Instrumentation |
| Zdroj: | Vacuum. 160:226-232 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2018.11.039 |
| Popis: | Owing to its high ionization degree, high power pulsed magnetron sputtering (HPPMS) has proven advantageous for Cu film growth. In this study, Cu films with different thicknesses deposited by HPPMS at different peak powers were prepared. Moreover, a titanium (Ti) interlayer was used to improve the Cu (111) out-of-plane preferred orientation and adhesion. The films prepared at high peak power exhibited high tensile stress, large grain size, and low electrical resistivity. Thicker Cu films exhibited lower stress and larger grain size, resulting in better electrical conductivity and adhesion. At the same time, a Ti interlayer with (002) preferred orientation could greatly improve the (111) out-of-plane preferred orientation and adhesion of the Cu film. |
| Databáze: | OpenAIRE |
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