Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

Autor:	Sz-Chian Liou, Hsiang-Hsi Kung, Y. K. Kuo, Fangcheng Chou, Ming-Wen Chu, Wei-Li Lee, Fei-Ting Huang, Raman Sankar, Kai-Hsin Wu
Rok vydání:	2012
Předmět:	Diffraction Materials science Condensed matter physics Hall effect Intercalation (chemistry) Scanning transmission electron microscopy Doping Condensed Matter Physics Spectroscopy Single crystal Stoichiometry Electronic Optical and Magnetic Materials
Zdroj:	Physical Review B. 86
ISSN:	1550-235X 1098-0121
DOI:	10.1103/physrevb.86.081104
Popis:	We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the BiSe antisite and partial Bi2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01bf8be398926896191e755aa36b11f6 https://doi.org/10.1103/physrevb.86.081104 Zobrazit plný text záznamu