A multifunctional molecular spintronic platform with magnetoresistive and memristive responses via a self-assembled monolayer
| Autor: | Shih-Hang Chang, Jhen-Yong Hong, Piin-Chen Yeh, Hung-Wei Shiu, Chia-Hao Chen, Minn-Tsong Lin, Wen-Chung Chiang, Kui-Hon Ou Yang |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Spintronics Magnetoresistance General Physics and Astronomy Self-assembled monolayer Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Non-volatile memory X-ray photoelectron spectroscopy Ferromagnetism 0103 physical sciences Monolayer Self-assembly 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 125:142905 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5057893 |
| Popis: | We report the spin-dependent transport and the I-V hysteretic characteristics in molecular-level organic spin valves containing a self-assembled-monolayer (SAM) barrier of 1,4 benzenedimethanethiol (BDMT). X-ray photoelectron spectroscopy confirms the establishment of an ordered self-assembled monolayer of BDMT with the phosphonic groups coordinated onto the ferromagnet surface. The magnetoresistive (MR) and the I-V curves characterize the transport properties of the SAM-based organic spin valves, which exhibit both types of non-volatile memory switching, i.e., the magnetoresistive and the memristive switching. The results reveal the possibility of integrating organic SAM into the future multifunctional molecular-level spintronic device applications.We report the spin-dependent transport and the I-V hysteretic characteristics in molecular-level organic spin valves containing a self-assembled-monolayer (SAM) barrier of 1,4 benzenedimethanethiol (BDMT). X-ray photoelectron spectroscopy confirms the establishment of an ordered self-assembled monolayer of BDMT with the phosphonic groups coordinated onto the ferromagnet surface. The magnetoresistive (MR) and the I-V curves characterize the transport properties of the SAM-based organic spin valves, which exhibit both types of non-volatile memory switching, i.e., the magnetoresistive and the memristive switching. The results reveal the possibility of integrating organic SAM into the future multifunctional molecular-level spintronic device applications. |
| Databáze: | OpenAIRE |
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