Electronic structure of α and γ phases of Si(111)––Sn
| Autor: | Anne Charrier, J.-M. Themlin, F. Thibaudau, J.-M. Debever, I. Forbeaux |
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| Rok vydání: | 2000 |
| Předmět: |
Condensed matter physics
Silicon Band gap Fermi level General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Electronic structure Condensed Matter Physics Surfaces Coatings and Films Brillouin zone Metal symbols.namesake chemistry visual_art visual_art.visual_art_medium symbols Tin Surface states |
| Zdroj: | Applied Surface Science. :375-379 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(00)00218-x |
| Popis: | This work presents a detailed comparison of the electronic properties of two phases (α and γ) of the prototypical Si(111)– 3 × 3 –Sn system, focussing on the empty surface states. The latter reconstruction has been studied at room temperature with inverse photoemission (KRIPES). For the γ-phase characterised by an equal amount of Sn and Si adatoms, a charge transfer towards the Sn adatom leaves an empty surface state localised on Si adatoms, and observed in KRIPES 0.4 eV above the Fermi level (EF) at the surface Brillouin zone (SBZ) center. The band gap of this semiconducting γ-phase is estimated around 0.5 eV. In contrast, the α phase with only Sn adatoms shows a metallic behaviour and two distinct adatom-derived empty surface states. |
| Databáze: | OpenAIRE |
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