Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering
| Autor: | Yoon S. Choi, Sung I. Kim, In S. Choi, Youn J. Kim, Su B. Jin, Jeon G. Han |
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| Rok vydání: | 2010 |
| Předmět: |
Chemistry
Metals and Alloys Analytical chemistry Surfaces and Interfaces Substrate (electronics) Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid X-ray photoelectron spectroscopy Sputtering Physical vapor deposition Materials Chemistry Thin film High-resolution transmission electron microscopy |
| Zdroj: | Thin Solid Films. 518:6241-6244 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.03.041 |
| Popis: | Tin-doped indium oxide (ITO) thin films were deposited on glass substrates at various oxygen flow rates using a planar magnetron sputtering system with facing targets. In this system, the strong internal magnets inside the target holders confine the plasma between the targets. High resolution transmission electron microscopy revealed a combination of amorphous and crystalline phases on the glass substrate. X-ray photoelectron spectroscopy suggested that the decrease in carrier concentration and increase in mobility were caused by a decrease in the concentration of Sn4+ states. The electrical and optical properties of the ITO films were examined by Hall measurements and UV–visible spectroscopy, which showed a film resistivity and transmittance of 4.26 × l0−4 Ω cm, and > 80% in the visible region, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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