Near-infrared sensitivity enhancement of a back-illuminated complementary metal oxide semiconductor image sensor with a pyramid surface for diffraction structure
| Autor: | H. Ikeda, Y. Ebiko, Yoshiya Hagimoto, Itaru Oshiyama, Hayato Iwamoto, T. Oinoue, S. Yokogawa, T. Hirano, S. Saito |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry 010401 analytical chemistry Substrate (electronics) 01 natural sciences Ray 0104 chemical sciences 0103 physical sciences Optoelectronics Quantum efficiency Crystalline silicon Image sensor business Pyramid (geometry) Dark current |
| Zdroj: | 2017 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm.2017.8268403 |
| Popis: | We demonstrated the near-infrared (NIR) sensitivity enhancement of back-illuminated complementary metal oxide semiconductor image sensors (BI-CIS) with a pyramid surface for diffraction (PSD) structures on crystalline silicon and deep trench isolation (DTI). The incident light diffracted on the PSD because of the strong diffraction within the substrate, resulting in a quantum efficiency of more than 30% at 850 nm. By using a special treatment process and DTI structures, without increasing the dark current, the amount of crosstalk to adjacent pixels was decreased, providing resolution equal to that of a flat structure. Testing of the prototype devices revealed that we succeeded in developing unique BI-CIS with high NIR sensitivity. |
| Databáze: | OpenAIRE |
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