| Autor: |
Abdul-Jabbar, NM, Kalkan, B, Huang, G-Y, MacDowell, AA, Gronsky, R, Bourret-Courchesne, ED, Wirth, BD |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Applied Physics Letters, vol 105, iss 5 |
| Popis: |
We observe that pressure-induced amorphization of Ga2SeTe 2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10-11 GPa in contrast to those with aperiodic structures, which amorphize around 7-8 GPa. The result is an instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional vacancy structures in Ga2SeTe2 provide an energetically preferred crystal lattice that is less prone to collapse under applied pressure. This is corroborated through first-principles electronic structure calculations, which demonstrate that the energy stability of III-VI structures under hydrostatic pressure is highly dependent on the configuration of intrinsic vacancies. © 2014 AIP Publishing LLC. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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