Physical Review B

Autor: Sandoval, M. A. Toloza, Silva, A. Ferreira da, Silva, E. A. de Andrada e, Rocca, G. C. La
Jazyk: angličtina
Rok vydání: 2012
Zdroj: Repositório Institucional da UFBA
Universidade Federal da Bahia (UFBA)
instacron:UFBA
DOI: 10.1103/PhysRevB.86.195302
Popis: p. 1-4 Submitted by Edileide Reis (leyde-landy@hotmail.com) on 2014-05-12T13:21:31Z No. of bitstreams: 1 M. A. Toloza Sandoval.pdf: 437844 bytes, checksum: 952a06fe0e43e4c0bd3696a3a9726762 (MD5) Approved for entry into archive by Alda Lima da Silva (sivalda@ufba.br) on 2014-11-11T18:03:46Z (GMT) No. of bitstreams: 1 M. A. Toloza Sandoval.pdf: 437844 bytes, checksum: 952a06fe0e43e4c0bd3696a3a9726762 (MD5) Made available in DSpace on 2014-11-11T18:03:46Z (GMT). No. of bitstreams: 1 M. A. Toloza Sandoval.pdf: 437844 bytes, checksum: 952a06fe0e43e4c0bd3696a3a9726762 (MD5) Previous issue date: 2012 The renormalization of the electron g factor by the confining potential in semiconductor nanostructures is considered. A new effective k⋅p Hamiltonian for the electronic states in III–V semiconductor nanostructures in the presence of an external magnetic field is introduced. The mesoscopic spin-orbit (Rashba type) and Zeeman interactions are taken into account on an equal footing. It is then solved analytically for the electron effective g factor in symmetric quantum wells (g∗QW). Comparison with different spin quantum beat measurements in GaAs and InGaAs structures demonstrates the accuracy and utility of the theory. The quantum size effects in g∗QW are easily understood and its anisotropy Δg∗QW (i.e., the difference between the in-plane and perpendicular configurations) is shown to be given by a mesoscopic spin-orbit effect having the same origin as the Rashba one.
Databáze: OpenAIRE