Analytical model for subband engineering in undoped double gate MOSFETs

Autor:	Ferrier R. Clerc G. Pananakakis G. Ghibaudo F. Boeuf T. Skotnicki, M.
Přispěvatelé:	Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Domenget, Chahla, Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Jazyk:	angličtina
Rok vydání:	2005
Předmět:	[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing [INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing ComputingMilieux_MISCELLANEOUS [SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
Zdroj:	SSDM 2005 SSDM 2005, 2005, XX, pp.XX
Popis:	International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9b60fd339f5a4cfa314f515766ce84ce https://hal.archives-ouvertes.fr/hal-00146187 Zobrazit plný text záznamu