Improvement of the thermal properties of optically pumped semiconductor chips at 850 nm (orale)
Autor: | Gozhyk, Iryna, Beaudoin, Grégoire, Janicot, Sylvie, Lafosse, Xavier, Dumont, Paul, Garnache, Arnaud, Georges, Patrick, Lucas-Leclin, Gaëlle, Sagnes, Isabelle |
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Přispěvatelé: | Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry / Lasers, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), RTRA - Triangle de la Physique RENATECH |
Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Compound Semiconductor Week-International Conference in Indium Phosphide and Related Materials Compound Semiconductor Week-International Conference in Indium Phosphide and Related Materials, May 2014, Montpellier, France |
Popis: | Thermal saturation of VECSELs emission properties stays a major issue in those applications, requiring a high precision on the chip emission wavelength (such as atomic clocks experiments). In this paper we analyze the possibility to reduce the thermal resistance of the semiconductor chip emitting at 850nm by means of substrate substitution method. We propose two different techniques and compare their efficiency through experimental study on VECSEL emission properties. |
Databáze: | OpenAIRE |
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