Development of plasma etching processes for the integration of III-V semicondutors as trigate nMOSFET’s channels
| Autor: | Bizouerne, M., Pargon, E., Burtin, P., Camille Petit-Etienne, Latu-Romain, E., Labau, S., Arnaud, S., David, S., Martin, M., Billaud, M. |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Clot, Marielle |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France HAL |
| Popis: | International audience |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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