Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology
| Autor: | Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Yehia Tawfik, Halonen, Kari A. I. |
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| Přispěvatelé: | Department of Electronics and Nanoengineering, VTT Technical Research Centre of Finland, Aalto-yliopisto, Aalto University |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | VTT Technical Research Centre of Finland-PURE Najmussadat, M, Ahamed, R, Varonen, M, Parveg, D, Tawfik, Y & Halonen, K A I 2021, Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology . in EuMIC 2020-2020 15th European Microwave Integrated Circuits Conference ., 9337305, IEEE Institute of Electrical and Electronic Engineers, pp. 17-20, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 . |
| Popis: | In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2. |
| Databáze: | OpenAIRE |
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