GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer

Autor:	Groom, K. M., Alexander, R. R., Childs, D. T. D., Andrey Krysa, Roberts, J. S., Helmy, A. S., Hogg, R. A.
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5742685bf52c367eb3acdfd9d6d0e683 http://www.scopus.com/inward/record.url?eid=2-s2.0-84898653661&partnerID=MN8TOARS Zobrazit plný text záznamu