Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS
| Autor: | Curtis, J, Pham, AV, Aryanfar, F |
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| Rok vydání: | 2016 |
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| Zdroj: | IET Microwaves, Antennas and Propagation, vol 10, iss 10 Curtis, J; Pham, AV; & Aryanfar, F. (2016). Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS. IET Microwaves, Antennas and Propagation, 10(10), 1101-1105. doi: 10.1049/iet-map.2015.0818. UC Davis: Retrieved from: http://www.escholarship.org/uc/item/5dm702np |
| DOI: | 10.1049/iet-map.2015.0818. |
| Popis: | © The Institution of Engineering and Technology. The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka-band. The amplifier is fabricated in a 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The DPA has a centre frequency of 26.6 GHz, a measured small signal gain of 10.5 dB, output power at 1-dB compression point (P1 dB) of 26.9 dBm, maximum power added efficiency (PAE) of 42%, and PAE of 32% at 6 dB back-off power. To the best of the author's knowledge, this DPA is the first millimetre-wave (mm-wave) power amplifier to achieve a record 32% PAE at 6-dB back-off power from 26.9 dBm at Ka-band. |
| Databáze: | OpenAIRE |
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