A 1.8 GHz GM-C 10th Order Chebyshev filter implemented IN A 0.35 µm SiGe RF BiCMOS technology for telecommunications
| Autor: | Cojan, Radu, Delacressonnière, Bruno |
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| Přispěvatelé: | Faculty of Electronics, Telecommunications and Information Technology Iasi (ETTI), 'Gheorghe Asachi' Technical University of Iasi (TUIASI), Equipes Traitement de l'Information et Systèmes (ETIS - UMR 8051), Ecole Nationale Supérieure de l'Electronique et de ses Applications (ENSEA)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Semiconductor Conference (CAS), 2010 International Semiconductor Conference (CAS), 2010 International, Oct 2010, Sinaia, Romania. pp.457-460, ⟨10.1109/SMICND.2010.5650529⟩ |
| DOI: | 10.1109/SMICND.2010.5650529⟩ |
| Popis: | International audience; In this paper, a 10th Order Chebyshev Gm-C active filter in a standard 0.35 µm SiGe BiCMOS process is presented. The filter has a simulated bandwidth of 75 MHz in the 1800 MHz frequency domain, 50 dB rejection in the stop band, a 6V power supply, and it is suitable for use in GSM 1800 applications. The calculations included in this paper can be considered a methodology for designing a real, implementable bandpass filter in any technology. |
| Databáze: | OpenAIRE |
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