Developments of TaN ALD Process for 3D Conformal Coatings

Autor: Brize, V., Prieur, T., Violet, P., Artaud, L., Berthome, G., Blanquet, E., Boichot, R., Doisneau, B., Farcy, A., Mantoux, A., Nuta, I., Pons, M., Volpi, F.
Přispěvatelé: Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), STMicroelectronics
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Chemical Vapor Deposition
Chemical Vapor Deposition, Wiley-VCH Verlag, 2011, 17 (10-12), pp.284-295. ⟨10.1002/cvde.201100045AccessionNumber:WOS⟩
ISSN: 0948-1907
1521-3862
DOI: 10.1002/cvde.201100045AccessionNumber:WOS⟩
Popis: International audience; There is a growing interest in producing tantalum nitride (TaN) thin films for various industrial applications. For example, in microelectronics, the development of IC technology is driven by the need to increase both performance and functionality while reducing power and cost. This goal can be achieved by several solutions among which the introduction of architecture enhancements such as 3D integration. The most challenging step is the deposition of a conformal, continuous, and adherent diffusion barrier. In this work, atomic layer deposition (ALD) of TaN thin films is explored using the combination between the thermodynamical behavior of the precursor, mass transfer in the reactor, and the operating conditions. TaN thin film deposition on very complex shape substrates, such as nanodots, TSV, silicon nanowires, and carbon nanotubes, has been evaluated.
Databáze: OpenAIRE
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