| Autor: |
Karasev, V. Y., Kryukov, V. D., Kuznetsov, M. G., Pintus, S. M., Lamin, M. A., Pchelyakov, O. P., Sokolov, L. V. |
| Zdroj: |
Russian Microelectronics; January 2005, Vol. 34 Issue: 1 p30-35, 6p |
| Abstrakt: |
Abstract Si(111) 7 × 7 films are grown by MBE on clean (111) diamond surfaces. It is shown that the film structure can be controlled in real time by varying the substrate temperature and Si flux. Modes of growth are identified that provide Si films of higher crystalline quality. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink