| Autor: |
Zheng, Haofei, Li, Lingqi, Chien, Yu-Chieh, Yang, Jie, Li, Sifan, Jain, Samarth, Xiang, Heng, Chen, Mingxi, Chai, Jianwei, Long, Yinfeng, Pam, Mei Er, Wang, Lin, Chi, Dongzhi, Ang, Kah-Wee |
| Zdroj: |
ACS Applied Materials & Interfaces; 20240101, Issue: Preprints |
| Abstrakt: |
Conventional Si-based physically unclonable functions (PUFs) take advantage of the unique variations in the fabrication processes. However, these PUFs are hindered by limited entropy sources and susceptibility to noise interference. Here we present a memristive device based on wafer-scale (2-in.) two-dimensional (2D) hafnium disulfide (HfS2) grown by molecular beam epitaxy (MBE). The polycrystalline HfS2thin film can offer enhanced entropy sources for PUF applications, such as lattice defects, which can facilitate the random formation of conductive filaments and result in significant device-to-device (D2D) variations. Our proposed PUF design seamlessly integrates two distinct operating modes within a single circuit module. First, a reconfigurable and highly secure mode 1, and second, an ultrareliable mode 2, both with near-ideal Entropy (∼1.0), normalized Hamming distance (∼0.5) and correlation coefficient (∼0.0). Additionally, a predictive Fourier regression model further confirms the unpredictable nature of our dual-mode PUF, with an average prediction accuracy of ∼50%. |
| Databáze: |
Supplemental Index |
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