| Autor: |
Hao, Qinghua, Cai, Menghao, Dai, Hongwei, Xing, Yuntong, Chen, Hongjing, Zhang, Aoyu, Li, Longde, Chenwen, Zhanhong, Wang, Xia, Han, Jun-Bo |
| Zdroj: |
ACS Applied Materials & Interfaces; November 2024, Vol. 16 Issue: 45 p62429-62435, 7p |
| Abstrakt: |
Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin–orbit torques (SOT) induced by the in-plane current in Fe3GeTe2(FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for “writing” and “reading”. Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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